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MJ 11016 ISC Darlington transistor, NPN, 120V, 30A, 200W, TO-3

Item-No.: MJ 11016 ISC

 €

4,17

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Description

MJ 11016 ISC

INCHANGE Semiconductor Silicon NPN Darlington Power Transistor

Description: - Collector-emitter breakdown voltage
- V(BR)CEO= 120V(min.)
- High direct current amplification
: hFE= 1000(min.)@IC= 20A
- Low collector saturation voltage
- VCE (sat)= 3.0V(Max.)@ IC= 20A
- Addition to PNP MJ11015
- Minimal lot-to-lot variations for robust device performance and reliable operation

applications:
- Designed for use as output devices in complementary
amplifier applications.




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Technical Details
Technical information

Technical Details

  • General
    • Type
    • Bipolartransistoren (BJT)
    • Design
    • Darlington-Transistoren
    • Technology
    • NPN
    • Mounting form
    • TO-3
  • Electrical values
    • Uceo
    • 120 V
    • Ic
    • 30 A
    • Ptot
    • 200 W
    • hFE
    • >1000
  • Manufacturer specifications
    • Manufacturer
    • INCHANGE
    • Factory number
    • MJ11016
    • Package weight
    • 0.011 kg
    • RoHS
    • conform
    • EAN / GTIN
    • 9900002716880
Datasheets
Datasheet/manual

Technical Details

  • General
    • Type
    • Bipolartransistoren (BJT)
    • Design
    • Darlington-Transistoren
    • Technology
    • NPN
    • Mounting form
    • TO-3
  • Electrical values
    • Uceo
    • 120 V
    • Ic
    • 30 A
    • Ptot
    • 200 W
    • hFE
    • >1000
  • Manufacturer specifications
    • Manufacturer
    • INCHANGE
    • Factory number
    • MJ11016
    • Package weight
    • 0.011 kg
    • RoHS
    • conform
    • EAN / GTIN
    • 9900002716880