Notebook, PC Zubehör, Festplatte und Elektronik bei Reichelt at reichelt elektronik

reichelt elektronik GmbH & Co. KG
Elektronikring 1
26452 Sande Germany

phone: +49 (0)4422 955-333
mail: info@reichelt.de
www.reichelt.de


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  • Transistors, IRFB..-IRFI..

  • page :
  •  1 - 16 of  51  items. 
 
  • Type:

    Power MOSFET

  • Technology:

    High-frequency DC-DC converter

  • Design:

    N-FET

  • Housing:

    TO-220AB

  • UDS:

    200 V

  • Ic25:

    56 A

  • Ptot:

    380 W

  • RDS(on):

    40 mOhm

  • td (on):

    12

  • UGS(th):

    2 V

  • td (off):

    12

Weight incl.:

0,004 kg

 
  • Type:

    Power MOSFET

  • Technology:

    Efficiency synchronous rectifier

  • Design:

    N-FET

  • Housing:

    TO-220AB

  • UDS:

    60 V

  • Ic25:

    195 A

  • RDS(on):

    2.1 mOhm

  • td (on):

    16

  • UGS(th):

    2 V

  • td (off):

    118

Weight incl.:

0,002 kg

 
  • Type:

    Power MOSFET

  • Technology:

    Efficiency synchronous rectifier

  • Design:

    N-FET

  • Housing:

    DIP-4

  • UDS:

    60 V

  • Ic25:

    120 A

  • Ptot:

    370 W

  • RDS(on):

    2.8 mOhm

  • td (on):

    25

  • UGS(th):

    2 V

  • td (off):

    69

Weight incl.:

0,002 kg

 
  • Type:

    Power MOSFET

  • Technology:

    High-frequency DC-DC converter

  • Design:

    N-FET

  • Housing:

    DIP-4

  • UDS:

    200 V

  • Ic25:

    31 A

  • Ptot:

    200 W

  • RDS(on):

    82 mOhm

  • td (on):

    13

  • UGS(th):

    2 V

  • td (off):

    13

Weight incl.:

0,002 kg

 
  • Type:

    Power MOSFET

  • Technology:

    High-frequency DC-DC converter

  • Design:

    N-FET

  • Housing:

    DIP-4

  • UDS:

    60 V

  • Ic25:

    120 A

  • RDS(on):

    2.4 mOhm

  • td (on):

    19

  • UGS(th):

    2 V

  • td (off):

    55

Weight incl.:

0,002 kg

 
  • Type:

    Power MOSFET

  • Technology:

    High-frequency DC-DC converter

  • Design:

    N-FET

  • Housing:

    DIP-4

  • UDS:

    75 V

  • Ic25:

    120 A

  • RDS(on):

    3.3 mOhm

  • td (on):

    20

  • UGS(th):

    2 V

  • td (off):

    55

Weight incl.:

0,002 kg

 
  • Type:

    Power MOSFET

  • Technology:

    High-frequency DC-DC converter

  • Design:

    N-FET

  • Housing:

    DIP-4

  • UDS:

    75 V

  • Ic25:

    120 A

  • RDS(on):

    4.6 mOhm

  • td (on):

    15

  • UGS(th):

    2 V

  • td (off):

    38

Weight incl.:

0,002 kg

 
  • Type:

    Power MOSFET

  • Technology:

    High-frequency DC-DC converter

  • Design:

    P-FET

  • Housing:

    DIP-4

  • UDS:

    75 V

  • Ic25:

    80 A

  • RDS(on):

    7.34 mOhm

  • td (on):

    16

  • UGS(th):

    2 V

  • td (off):

    43

Weight incl.:

0,002 kg

 
  • Type:

    Power MOSFET

  • Technology:

    High-frequency DC-DC converter

  • Design:

    N-FET

  • Housing:

    TO-220AB

  • UDS:

    60 V

  • Ic25:

    43 A

  • Ptot:

    71 W

  • RDS(on):

    12.6 mOhm

  • td (on):

    6.3

  • UGS(th):

    2 ... 4 V

  • td (off):

    49

Weight incl.:

0,002 kg

 
  • Type:

    Power MOSFET

  • Technology:

    High-frequency DC-DC converter

  • Design:

    P-FET

  • Housing:

    DIP-4

  • UDS:

    200 V

  • Ic25:

    38 A

  • Ptot:

    300 W

  • RDS(on):

    54 mOhm

  • td (on):

    16

  • UGS(th):

    2 V

  • td (off):

    47

Weight incl.:

0,002 kg

 
  • Type:

    Power MOSFET

  • Technology:

    High-frequency DC-DC converter

  • Design:

    P-FET

  • Housing:

    DIP-4

  • UDS:

    150 V

  • Ic25:

    17 A

  • Ptot:

    80 W

  • RDS(on):

    80 mOhm

  • td (on):

    7

  • UGS(th):

    2 V

  • td (off):

    12

Weight incl.:

0,004 kg

 
  • Type:

    Power MOSFET

  • Technology:

    High-frequency DC-DC converter

  • Design:

    N-FET

  • Housing:

    TO-220-Fullpak

  • UDS:

    200 V

  • Ic25:

    18 A

  • RDS(on):

    80 mOhm

  • td (on):

    7.8

  • UGS(th):

    2 V

  • td (off):

    16

Weight incl.:

0,002 kg

 
  • Type:

    Power MOSFET

  • Technology:

    Efficiency synchronous rectifier

  • Design:

    N-Ch

  • Housing:

    TO-220AB

  • UDS:

    100 V

  • Ic25:

    180 A

  • Ptot:

    370 W

  • RDS(on):

    3.7 mOhm

  • td (on):

    25

  • UGS(th):

    2 ... 4 V

  • td (off):

    78

Weight incl.:

0,001 kg

 
  • Type:

    Power MOSFET

  • Technology:

    Efficiency synchronous rectifier

  • Design:

    N-FET

  • Housing:

    TO-220-Fullpak

  • UDS:

    150 V

  • Ic25:

    104 A

  • Ptot:

    380 W

  • RDS(on):

    9.3 mOhm

  • td (on):

    18

  • UGS(th):

    2 V

  • td (off):

    41

Weight incl.:

0,002 kg

 
  • Type:

    Power MOSFET

  • Technology:

    Efficiency synchronous rectifier

  • Design:

    N-FET

  • Housing:

    TO-220AB

  • UDS:

    200 V

  • Ic25:

    76 A

  • Ptot:

    375 W

  • RDS(on):

    17 mOhm

  • td (on):

    17

  • UGS(th):

    2 V

  • td (off):

    56

Weight incl.:

0,002 kg

 
  • Type:

    Power MOSFET

  • Technology:

    High-frequency DC-DC converter

  • Design:

    N-FET

  • Housing:

    TO-220-Fullpak

  • UDS:

    150 V

  • Ic25:

    41 A

  • Ptot:

    200 W

  • RDS(on):

    45 mOhm

  • td (on):

    16

  • UGS(th):

    2 V

  • td (off):

    25

Weight incl.:

0,002 kg