reichelt elektronik GmbH & Co. KG
Elektronikring 1
26452 Sande Germany

phone: +49 (0)4422 955-333
mail: info@reichelt.de
www.reichelt.de


LND150N3-G :: DMOS FET, N-channel, TO-92

Item-No.: LND150N3-G
€0,55
Category of goods: 1

LND150N3-G


The LND150 is a high-voltage N-channel depletion mode (normally-on) transistor utilising lateral DMOS technology. The gate is ESD protected. The LND150 is ideal for high-voltage applications in the areas of normally-on switches, precision constant current sources, voltage ramp generation and amplification.

• Free from secondary breakdown
• Low power drive requirement
• Ease of paralleling
• Excellent thermal stability
• Integral source-drain diode
• High input impedance and low CISS
• ESD gate protection

Technical data:
• BVdsx: 500 V
• RDS: 1000 ohm
• Ugs (off): -1.0 - -3.0 V
• RDS: 1 kOhm
• Ic: 1 mA



Manufacturer : MICROCHIP
Factory number : LND150N3-G
Package weight : 0.0001 kg
RoHS : conform
Technical information
Datasheet/manual