reichelt elektronik GmbH & Co. KG
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26452 Sande Germany

phone: +49 (0)4422 955-333

DN1509N8-G :: MOSFET N-channel, SOT-89

Item-No.: DN1509N8-G
Category of goods: 1


This low-threshold, depletion-mode (normally-on) transistor utilises an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power-handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where a very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance and fast switching speeds are desired.

• High input impedance
• Low input capacitance
• Fast switching speeds
• Low on-resistance
• Free from secondary breakdown
• Low input and output leakages

Technical data:
• Cutoff voltage: - 1.8 - -3.5 V
• RDS: 6
• BVdsx: 90 V

Manufacturer : MICROCHIP
Factory number : DN1509N8-G
Package weight : 0.0001 kg
RoHS : conform
Technical information